✔ Esd Protection Diode Rf

Esd Protection Diode Rf

- June 26, 2017

Semtech esd protection diodes feature low clamping voltage low capacitance and low leakage current to protect your system interconnects from external esd threats. Esd protection diode ultralow capacitance micropackaged diodes for esd protection the esd8472 is designed to protect voltage sensitive components that require ultra low capacitance from esd and transient voltage events.

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It is possible to purchase other small surface mount esd protection devices.

Esd protection diode rf. Toshiba provides a tvs diode esd protection diode that protects the device from such abnormal transient voltages that penetrate from external terminals and prevents damage and malfunction. All resources st has designed dedicated protection solutions for rf ghz circuits using its extra low capacitance advanced technology. Excellent clamping capability low capacitance high breakdown voltage high linearity low leakage and fast response time make these parts ideal for esd protection on designs where board space is at a premium.

Femto farad railclamp esd protection for rf interfaces rclamp1561pq is a low capacitance esd protection device specifically designed to protect high power rf interfaces. Littlelfuse mlv device can be connected near the io port to clamp the esd or surge event with smd package and wide capacitance range to as low as 3pf mlv is widely used from audio control as well as dataline communication such as usb20. Search products by applications and interfaces with parametric search.

When an esd strike occurs the esd diode will clamp the voltage so that the downstream cir cuitry will not be exposed to a voltage greater than the clamping voltage. With capacitance lower than 05 pf sts esd protection devices perfectly preserve signal integrity while rerouting esd strikes to ground. This combination provides better esd protection than using a single inductor.

Excellent clamping capability low capacitance high breakdown voltage high linearity low leakage and fast response time. Using the bav99 diodes with the inductor to ground provides optimum protection for devices that are very sensitive to esd. It has industry leading capacitance linearity over voltage making it ideal for rf applications.

The bidirectional esd protection diode esd112 b1 is very mu ch suitable for ultra wide band applications or active rf antennas operating at voltages of up to 53v at leakage currents of less than 10 na. Pulse guard esd suppressor or tvs diode array spa diodes devices should be considered. It offers desirable characteristics for board level protection including fast response time low operating and clamping voltage and no device degradation.

With a typical capacitance of 02pf at 1ghz it features lowest insertion loss and low clamping voltage.